A comparative study of single-electron memories

Author

Wasshuber, Christoph ; Kosina, Hans ; Selberherr, Siegfried

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Austria

Volume

45

Issue

11

fYear

1998

fDate

11/1/1998 12:00:00 AM

Firstpage

2365

Lastpage

2371

Abstract

We study different memory cell designs and compare their advantages and disadvantages from an engineering point of view. We look at operational stability as a function of temperature and stray charge (random background charge), and discuss the issue of reliable mass production. We conclude that memories seem to be one of the most promising large scale single-electron tunnel applications, that lie, particularly when granular films are used, already in the range of today´s process technology

Keywords

error statistics; flip-flops; probability; semiconductor quantum dots; semiconductor storage; single electron transistors; stability; SET ring memory; SET static memory cell; granular films; large scale single-electron tunnel applications; memory cell designs; operational stability; random background charge; reliable mass production; single-electron memories; stray charge; temperature; Dielectric materials; Error analysis; Large-scale systems; Mass production; Potential well; Quantum capacitance; Quantum dots; Robustness; Single electron memory; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.726659

Filename

726659