Title :
A comparative study of single-electron memories
Author :
Wasshuber, Christoph ; Kosina, Hans ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Austria
fDate :
11/1/1998 12:00:00 AM
Abstract :
We study different memory cell designs and compare their advantages and disadvantages from an engineering point of view. We look at operational stability as a function of temperature and stray charge (random background charge), and discuss the issue of reliable mass production. We conclude that memories seem to be one of the most promising large scale single-electron tunnel applications, that lie, particularly when granular films are used, already in the range of today´s process technology
Keywords :
error statistics; flip-flops; probability; semiconductor quantum dots; semiconductor storage; single electron transistors; stability; SET ring memory; SET static memory cell; granular films; large scale single-electron tunnel applications; memory cell designs; operational stability; random background charge; reliable mass production; single-electron memories; stray charge; temperature; Dielectric materials; Error analysis; Large-scale systems; Mass production; Potential well; Quantum capacitance; Quantum dots; Robustness; Single electron memory; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
