Title :
Switch-off behavior of floating-body PD SOI MOSFET´s
Author :
Perron, L.M. ; Hamaguchi, C. ; Lacaita, A.L. ; Maegawa, S. ; Yamaguchi, Y.
Author_Institution :
Dept. of Electron. Eng., Osaka Univ., Japan
fDate :
11/1/1998 12:00:00 AM
Abstract :
In this work, we report a detailed study of the switch-off transients of the drain current in floating-body partially depleted (PD) SOI MOSFETs. When operated in the kink region and at frequency in the MHz range, floating body effects improve the current capability of these devices. However, we point out a serious drawback, that has been previously overlooked: the same effects lead to orders of magnitude increase of the off-state leakage current calling for a trade-off between speed and power dissipation
Keywords :
MOSFET; leakage currents; silicon-on-insulator; switching; transient analysis; MHz frequency range; Si; device speed; drain current; floating-body PD SOI MOSFET; kink region; offstate leakage current; partially depleted SOI MOSFET; power dissipation; switch-off behavior; switch-off transients; Capacitance; Circuit synthesis; Impact ionization; Leakage current; MOSFET circuits; Power dissipation; Steady-state; Switching frequency; Tellurium; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
