Title :
A simple technique to measure generation lifetime in partially depleted SOI MOSFETs
Author :
Shin, Hyungcheol ; Racanelli, M. ; Huang, W.M. ; Foerstner, J. ; Choi, Seokjin ; Schroder, D.K.
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
fDate :
11/1/1998 12:00:00 AM
Abstract :
This work presents a new, simple method of measuring the generation lifetime in silicon-on-insulator (SOI) MOSFETs. Lifetime is extracted from the transient characteristics of MOSFET subthreshold current. Using this technique, generation lifetime was mapped across finished SIMOX (Separation by IMplantation of OXygen) wafers and BESOI (Bonded and Etchedback SOI) wafers. BESOI material evaluated in this study had about seven times longer effective generation lifetime than SIMOX material and both the SIMOX and the BESOI are shown to have a lifetime variation of ±10% across four inch wafers
Keywords :
MOSFET; SIMOX; carrier lifetime; semiconductor device testing; BESOI material; MOSFET subthreshold current; SIMOX wafers; Si; bonded/etchedback SOI; generation lifetime; partially depleted SOI MOSFET; transient characteristics; Aluminum; Density measurement; Electrical resistance measurement; MOSFET circuits; Noise measurement; Pulse measurements; Semiconductor device noise; Silicon on insulator technology; Threshold voltage; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
