Title :
A simple model for threshold voltage of surrounding-gate MOSFET´s
Author :
Auth, Christopher P. ; Plummer, James D.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
11/1/1998 12:00:00 AM
Abstract :
We propose a threshold voltage model for surrounding-gate MOSFETs. The model treats the ends and the double-gate regions of the channel as separate devices operating in parallel. The threshold voltage for the full device is obtained as the perimeter-weighted sum of the threshold voltages of the two parts enabling simple analytic threshold models to be used. Short channel effects and drain-induced barrier lowering are also modeled in this manner
Keywords :
MOSFET; semiconductor device models; analytic model; drain induced barrier lowering; short channel effect; surrounding gate MOSFET; threshold voltage; Doping; Equations; MOSFET circuits; Semiconductor process modeling; Silicon; Threshold voltage; Wrapping;
Journal_Title :
Electron Devices, IEEE Transactions on
