DocumentCode
1440503
Title
Oxide-confined monolithic, multiple-wavelength vertical-cavity surface-emitting laser arrays with a 40-nm wavelength span
Author
Zhou, Yuxin ; Luong, S. ; Hains, C.P. ; Cheng, Julian
Author_Institution
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Volume
10
Issue
11
fYear
1998
Firstpage
1527
Lastpage
1529
Abstract
Monolithic, multiple-wavelength, vertical-cavity surface-emitting laser arrays grown by controlling the metal-organic chemical vapor deposition epitaxial growth rate on a patterned substrate, and using selective oxidation for current confinement, have been demonstrated with a periodic, graded wavelength span of 40 nm, Near room-temperature, electrically pumped continuous-wave lasing is achieved over the entire 40-nm range, with uniform threshold currents of 4.5 mA/spl plusmn/1.0 mA, and with output powers ranging from 0.4-1.3 mW.
Keywords
integrated optoelectronics; laser cavity resonators; optical fabrication; optical transmitters; semiconductor laser arrays; surface emitting lasers; wavelength division multiplexing; 0.4 to 1.3 mW; 4.5 mA; MOCVD; current confinement; electrically pumped continuous-wave lasing; metal-organic chemical vapor deposition epitaxial growth rate; output powers; oxide-confined monolithic multiple-wavelength VCSEL laser arrays; patterned substrate; periodic graded wavelength span; room-temperature; selective oxidation; uniform threshold currents; vertical-cavity surface-emitting laser arrays; wavelength span; Chemical lasers; Chemical vapor deposition; Epitaxial growth; Optical arrays; Optical control; Power lasers; Pump lasers; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.726738
Filename
726738
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