High-efficiency GaInP-AlGaInP ridge waveguide single-mode lasers operating at 650 nm

Author

Kongas, J. ; Savolainen, P. ; Toivonen, M. ; Orsila, S. ; Corvini, P. ; Jansen, M. ; Nabiev, R.F. ; Pessa, M.

Author_Institution

Coherent-Tutcore Ltd., Tampere, Finland

Volume

10

Issue

11

fYear

1998

Firstpage

1533

Lastpage

1535

Abstract

The authors report a very high quantum efficiency of 91% for antireflection/high-reflection-coated GaInP-AlGaInP ridge waveguide laser diodes operating at 650 nm range. The laser structure was grown by solid-source molecular beam epitaxy. The laser diodes performed stable single-mode operation up to 60 mW. Threshold current as low as 50 mA was measured for 5.5×600 μm² laser diodes. To the authors´ best knowledge, this is among the best ever reported efficiency for visible lasers.

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser modes; laser transitions; molecular beam epitaxial growth; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 5.5 mum; 50 mA; 60 mA; 60 mW; 600 mum; 650 nm; 91 percent; GaInP-AlGaInP; GaInP-AlGaInP ridge waveguide laser diodes; antireflection coated; high-efficiency GaInP-AlGaInP ridge waveguide single-mode lasers; high-reflection-coated; laser structure; single-mode operation up; solid-source molecular beam epitaxy; threshold current; very high quantum efficiency; visible lasers; Coatings; Current measurement; Diode lasers; Etching; Molecular beam epitaxial growth; Optical materials; Optical waveguides; Semiconductor lasers; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.726740

Filename

726740