Title :
High-efficiency GaInP-AlGaInP ridge waveguide single-mode lasers operating at 650 nm
Author :
Kongas, J. ; Savolainen, P. ; Toivonen, M. ; Orsila, S. ; Corvini, P. ; Jansen, M. ; Nabiev, R.F. ; Pessa, M.
Author_Institution :
Coherent-Tutcore Ltd., Tampere, Finland
Abstract :
The authors report a very high quantum efficiency of 91% for antireflection/high-reflection-coated GaInP-AlGaInP ridge waveguide laser diodes operating at 650 nm range. The laser structure was grown by solid-source molecular beam epitaxy. The laser diodes performed stable single-mode operation up to 60 mW. Threshold current as low as 50 mA was measured for 5.5×600 μm2 laser diodes. To the authors´ best knowledge, this is among the best ever reported efficiency for visible lasers.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser modes; laser transitions; molecular beam epitaxial growth; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 5.5 mum; 50 mA; 60 mA; 60 mW; 600 mum; 650 nm; 91 percent; GaInP-AlGaInP; GaInP-AlGaInP ridge waveguide laser diodes; antireflection coated; high-efficiency GaInP-AlGaInP ridge waveguide single-mode lasers; high-reflection-coated; laser structure; single-mode operation up; solid-source molecular beam epitaxy; threshold current; very high quantum efficiency; visible lasers; Coatings; Current measurement; Diode lasers; Etching; Molecular beam epitaxial growth; Optical materials; Optical waveguides; Semiconductor lasers; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
