Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs

Author

Gnudi, A. ; Reggiani, S. ; Gnani, E. ; Baccarani, G.

Author_Institution

ARCES-DEIS, Univ. of Bologna, Bologna, Italy

Volume

33

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

336

Lastpage

338

Abstract

An analytical formulation of the threshold voltage variance induced by random dopant fluctuations in junctionless transistors is derived for both cylindrical nanowire and planar double-gate structures under uniform channel and constant mobility approximation. Results from drift-diffusion-based numerical methods are in reasonable agreement also for large , including mobility variations, and for short gate lengths. The results clearly indicate that the threshold voltage fluctuations can become a concern with the reduction of the critical dimensions.

Keywords

field effect transistors; nanowires; semiconductor device models; constant mobility approximation; cylindrical nanowire; drift-diffusion-based numerical methods; gate length; junctionless FET; junctionless transistors; mobility variations; planar double-gate structures; random dopant fluctuations; threshold voltage variability; Analytical models; Doping; FETs; Logic gates; Semiconductor process modeling; Threshold voltage; Cylindrical nanowire; junctionless transistor; random dopant fluctuations; semiconductor device modeling; threshold voltage variability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2181153

Filename

6145733