Experimental study of LCI lasers fabricated by single MOCVD overgrowth followed by selective dopant diffusion

Author

Sargent, Edward H. ; Suda, D.A. ; Margittai, A. ; Shepherd, F.R. ; Cleroux, M. ; Knight, G. ; Puetz, N. ; Makino, T. ; SpringThorpe, A.J. ; Chik, G. ; Xu, J.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

Volume

10

Issue

11

fYear

1998

Firstpage

1536

Lastpage

1538

Abstract

We report the design, fabrication, and characterization of lateral current injection (LCI) GaInAsP SQW lasers made using a single etch-and-regrowth followed by selective dopant diffusion. Devices are characterized electrically and optically from 10 to 300 K. Using the recently developed theory of the LCI laser, the threshold current, spontaneous efficiency, and stimulated efficiency are related to physical mechanisms that underlie the operation of this promising family of devices. We explore the prospects for LCI lasers to enable monolithic photonic integrated circuits and functional optoelectronic devices.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical fabrication; quantum well lasers; semiconductor doping; semiconductor growth; stimulated emission; vapour phase epitaxial growth; 10 to 300 K; GaInAsP; LCI lasers; functional optoelectronic devices; lateral current injection GaInAsP SQW laser fabrication; monolithic photonic integrated circuits; physical mechanisms; selective dopant diffusion; single MOCVD overgrowth; spontaneous efficiency; stimulated efficiency; threshold current; Etching; Laser theory; MOCVD; Optical design; Optical device fabrication; Optical devices; Optoelectronic devices; Photonic integrated circuits; Stimulated emission; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.726741

Filename

726741