AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact

Author

Sun, Xiao ; Cui, Sharon ; Alian, Alireza ; Brammertz, Guy ; Merckling, Clement ; Lin, Dennis ; Ma, T.P.

Author_Institution

Electr. Eng. Dept., Yale Univ., New Haven, CT, USA

Volume

33

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

438

Lastpage

440

Abstract

We introduce an ac transconductance dispersion method (ACGD) to profile the oxide traps in an MOSFET without needing a body contact. The method extracts the spatial distribution of oxide traps from the frequency dependence of transconductance, which is attributed to charge trapping as modulated by an ac gate voltage. The results from this method have been verified by the use of the multifrequency charge pumping (MFCP) technique. In fact, this method complements the MFCP technique in terms of the trap depth that each method is capable of probing. We will demonstrate the method with InP passivated InGaAs substrates, along with electrically stressed Si N-MOSFETs.

Keywords

III-V semiconductors; MOSFET; electron traps; gallium arsenide; indium compounds; passivation; AC transconductance dispersion; InGaAs; InP; MOSFET; body contact; charge trapping; multifrequency charge pumping; passivation; profile oxide traps; spatial distribution; trap depth; Dispersion; Electron traps; Hafnium compounds; Indium gallium arsenide; Logic gates; MOSFETs; Charge trapping; InGaAs; MOSFET; Si; oxide trap; spatial distribution; stress;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2181318

Filename

6145734