Title :
A high optical-gain /spl beta/-SiC bulk-barrier phototransistor for high-temperature applications
Author :
Kuen-Hsien Wu ; Yean-Kuen Fang ; Jyh-Jier Ho ; Wen-Tse Hsieh ; Chuang, W.H. ; Hwang, J.D.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A high optical-gain /spl beta/-SiC phototransistor (PT) with a bulk-barrier structure has been fabricated on a silicon substrate. It demonstrated high optical gains of 145 at 25/spl deg/C and 106 at 250/spl deg/C, under a 10-V bias and 10-μW incident optical power with a wavelength of 500 nm. The high optical gains at elevated temperatures are attributed to not only the excellent high-temperature properties of SiC materials, but also the bulk-barrier structure, in which the formed potential barrier, the short base region and an effect of thinning the quasi-neutral base region to zero thickness lead to a greatly enhanced current gain. The developed /spl beta/-SiC bulk-barrier PT possesses a potential for high-temperature high-gain optical-sensing applications.
Keywords :
high-temperature techniques; optical fabrication; optical materials; optical sensors; phototransistors; silicon compounds; /spl beta/-SiC bulk-barrier PT; /spl mu/W incident optical power; 10 V; 10 muW; 25 C; 250 C; 500 nm; SiC; SiC materials; bulk-barrier structure; elevated temperatures; excellent high-temperature properties; formed potential barrier; greatly enhanced current gain; high optical gains; high optical-gain /spl beta/-SiC bulk-barrier phototransistor; high-temperature applications; high-temperature high-gain optical-sensing applications; optical sensors; quasi-neutral base region; short base region; silicon substrate; zero thickness; Conducting materials; Optical buffering; Optical devices; Optical films; Optical materials; Photodetectors; Phototransistors; Silicon carbide; Solid state circuits; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
