Title :
1.4 MHz radio frequency metal-base transistor using single emitter layer
Author :
Yusoff, A.R.B. ; da Sillva, W.J. ; Song, Yuning ; Holz, E. ; Schulz, Dirk ; Shuib, S.A.
Author_Institution :
Dept. de Fis., Group of Org. Optoelectron. Devices, Univ. Fed. do Parana, Curitiba, Brazil
Abstract :
A report is presented on a study of single emitter layer metal base transistors with a base terminal made of aluminium grids. The latter exhibits low operating voltage associated to the high resistivity of the collector terminal and also shows very low leakage current. With such a single emitter layer, common-emitter current gain, on/off current ratio, and cutoff frequency of, respectively, 239.62, 3.8×107, and 1.4 MHz, were obtained.
Keywords :
leakage currents; low-power electronics; transistors; aluminium grid; collector terminal; common-emitter current gain; frequency 1.4 MHz; leakage current; low operating voltage; radio frequency metal-base transistor; single emitter layer; single emitter layer metal base transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.3235
