Title :
A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors
Author :
Chen, B. ; Gao, B. ; Sheng, S.W. ; Liu, L.F. ; Liu, X.Y. ; Chen, Y.S. ; Wang, Y. ; Han, R.Q. ; Yu, B. ; Kang, J.F.
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
fDate :
3/1/2011 12:00:00 AM
Abstract :
A new operation scheme on oxide-based resistive-switching devices [resistive random access memory (RRAM)] is proposed to improve the controllability of switching processes in order to achieve an improved memory performance. The improved device-to-device and cycle-to-cycle uniformity, reduced RESET current, and adjustable RHRS/RLRS ratio are demonstrated in the HfOx-based RRAM devices by using the new operation scheme, indicating the validity of the new operation scheme. The physical mechanism accounting for the new operation scheme effect is discussed.
Keywords :
hafnium compounds; random-access storage; HfOx; RESET current reduction; RRAM devices; controlled switching behaviors; cycle-to-cycle uniformity; device-to-device uniformity; oxide-based resistive-switching memory devices; resistive random access memory; Current measurement; Electrical resistance measurement; Performance evaluation; Process control; Resistance; Switches; Conductive filament; RESET current; resistive random access memory (RRAM); resistive switching; uniformity; variation;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2101577
