A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors

Author

Chen, B. ; Gao, B. ; Sheng, S.W. ; Liu, L.F. ; Liu, X.Y. ; Chen, Y.S. ; Wang, Y. ; Han, R.Q. ; Yu, B. ; Kang, J.F.

Author_Institution

Shenzhen Grad. Sch., Peking Univ., Shenzhen, China

Volume

32

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

282

Lastpage

284

Abstract

A new operation scheme on oxide-based resistive-switching devices [resistive random access memory (RRAM)] is proposed to improve the controllability of switching processes in order to achieve an improved memory performance. The improved device-to-device and cycle-to-cycle uniformity, reduced RESET current, and adjustable R_HRS/R_LRS ratio are demonstrated in the HfO_x-based RRAM devices by using the new operation scheme, indicating the validity of the new operation scheme. The physical mechanism accounting for the new operation scheme effect is discussed.

Keywords

hafnium compounds; random-access storage; HfO_x; RESET current reduction; RRAM devices; controlled switching behaviors; cycle-to-cycle uniformity; device-to-device uniformity; oxide-based resistive-switching memory devices; resistive random access memory; Current measurement; Electrical resistance measurement; Performance evaluation; Process control; Resistance; Switches; Conductive filament; RESET current; resistive random access memory (RRAM); resistive switching; uniformity; variation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2101577

Filename

5706341