A 90 nm CMOS LC-Tank Divide-by-3 Injection-Locked Frequency Divider With Record Locking Range

Author

Jang, Sheng-Lyang ; Chang, Chia-Wei

Author_Institution

Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan

Volume

20

Issue

4

fYear

2010

fDate

4/1/2010 12:00:00 AM

Firstpage

229

Lastpage

231

Abstract

This letter proposes a wide-locking range divide-by-3 injection-locked frequency divider fabricated in the 90 nm 1P9M CMOS technology. The divider consists of an nMOS cross-coupled p-core Armstrong LC oscillator and a center-tapped inductor in series with the pMOSFETs. The pMOSFETs are used as a linear and second harmonic mixer. At the supply voltage of 1 V, the free-running frequency is from 7.84 to 8.42 GHz, the current and power consumption of the divider without buffers are 4 mA and 4 mW respectively. At the incident power of 0 dBm, the locking range is 4.28 GHz (19.8%), from the incident frequency 19.52 to 23.8 GHz.

Keywords

CMOS integrated circuits; MOSFET; frequency dividers; microwave integrated circuits; microwave mixers; CMOS LC-Tank divide-by-3 injection-locked frequency divider; current 4 mA; frequency 19.52 GHz to 23.8 GHz; frequency 4.28 GHz; frequency 7.84 GHz to 8.42 GHz; linear harmonic mixer; nMOS cross-coupled p-core Armstrong LC oscillator; pMOSFET; power 4 mW; record locking range; second harmonic mixer; size 90 nm; voltage 1 V; 90 nm CMOS; Armstrong voltage controlled oscillator (VCO); divide-by-3 injection-locked frequency divider (ILFD); transformer; wide locking range;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2010.2042561

Filename

5431060