Closed-Form Expressions for the Resistance and the Inductance of Different Profiles of Through-Silicon Vias

Author

Liang, Yuanjun ; Li, Ye

Author_Institution

Shenzhen Institutes of Adv. Technol., Chinese Acad. of Sci., Shenzhen, China

Volume

32

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

393

Lastpage

395

Abstract

In this letter, closed-form expressions are proposed to calculate the parasitic resistance and inductance of different profiles of through-silicon vias (TSVs). The formulas for the tapered TSV are developed as the functions of the geometric parameters of the via. The expressions also cover the straight TSV when the slope wall angle is zero. The comparison between the formulas and numerical electromagnetic results shows that the formulas have high accuracy at low frequency, with maximum errors of 2% and 5% for the resistance and the inductance, respectively. The errors increase at high frequencies due to the skin effect and can be minimized by using fitting parameters.

Keywords

geometry; skin effect; three-dimensional integrated circuits; TSV; closed-form expressions; fitting parameters; geometric parameters; numerical electromagnetic results; parasitic inductance; parasitic resistance; skin effect; through-silicon vias; Closed-form solution; Current density; Inductance; Integrated circuit modeling; Mathematical model; Resistance; Through-silicon vias; Closed-form expressions; parasitic resistance and inductance; through-silicon vias (TSVs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2099203

Filename

5706346