Ultralow-Voltage Transparent $\\hbox {In}_{2} \\hbox {O}_{3}$ Nanowire Electric-Double-Layer Transistors

Author

Liu, Huixuan ; Sun, Jia ; Jiang, Jie ; Tang, Qingxin ; Wan, Qing

Author_Institution

Ningbo Inst. of Mater. Technol. & Eng., Chinese Acad. of Sci., Ningbo, China

Volume

32

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

315

Lastpage

317

Abstract

Fully transparent In₂O₃ nanowire transistors gated by LiCl-incorporated SiO₂-based solid electrolytes are fabricated on glass substrates at room temperature. Ultralow-voltage (0.4 V) operation of such a device is realized due to the extremely large electric-double-layer (EDL) capacitance (8.93 at 20 Hz) of the composite solid electrolyte. The subthreshold slope and equivalent field-effect mobility of the transparent nanowire EDL transistors are estimated to be 70 mV/dec and 739.7 , respectively. Such ultralow-voltage transparent nanowire transistors are promising for portable invisible sensors.

Keywords

field effect transistors; indium compounds; lithium compounds; nanowires; silicon compounds; solid electrolytes; EDL capacitance; In₂O₃; composite solid electrolyte; electric double-layer transistors; equivalent field-effect mobility; frequency 20 Hz; glass substrates; portable invisible sensors; ultralow-voltage transparent nanowire transistors; voltage 0.4 V; Capacitance; Logic gates; Nanobioscience; Nickel; Solids; Substrates; Transistors; Electric double layer (EDL); ion-incorporated solid electrolytes; nanowire transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2100075

Filename

5706350

Ultralow-Voltage Transparent Nanowire Electric-Double-Layer Transistors

Liu, Huixuan ; Sun, Jia ; Jiang, Jie ; Tang, Qingxin ; Wan, Qing

jour

Ultralow-Voltage Transparent $\\hbox {In}_{2} \\hbox {O}_{3}$ Nanowire Electric-Double-Layer Transistors