DocumentCode :
1441218
Title :
Ultralow-Voltage Transparent 
Nanowire Electric-Double-Layer Transistors
Author :
Liu, Huixuan ; Sun, Jia ; Jiang, Jie ; Tang, Qingxin ; Wan, Qing
Author_Institution :
Ningbo Inst. of Mater. Technol. & Eng., Chinese Acad. of Sci., Ningbo, China
Volume :
32
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
315
Lastpage :
317
Abstract :
Fully transparent In2O3 nanowire transistors gated by LiCl-incorporated SiO2-based solid electrolytes are fabricated on glass substrates at room temperature. Ultralow-voltage (0.4 V) operation of such a device is realized due to the extremely large electric-double-layer (EDL) capacitance (8.93 at 20 Hz) of the composite solid electrolyte. The subthreshold slope and equivalent field-effect mobility of the transparent nanowire EDL transistors are estimated to be 70 mV/dec and 739.7 , respectively. Such ultralow-voltage transparent nanowire transistors are promising for portable invisible sensors.
Keywords :
field effect transistors; indium compounds; lithium compounds; nanowires; silicon compounds; solid electrolytes; EDL capacitance; In2O3; composite solid electrolyte; electric double-layer transistors; equivalent field-effect mobility; frequency 20 Hz; glass substrates; portable invisible sensors; ultralow-voltage transparent nanowire transistors; voltage 0.4 V; Capacitance; Logic gates; Nanobioscience; Nickel; Solids; Substrates; Transistors; Electric double layer (EDL); ion-incorporated solid electrolytes; nanowire transistors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2100075
Filename :
5706350
Link To Document :
