Low-Voltage Organic Nonvolatile Thin-Film Transistor Memory Based on a P(MMA-GMA)–Al–O Complex Layer

An organic nonvolatile thin-film transistor memory is demonstrated by an inset complex layer between the active layer and the gate dielectric layer, which is realized by heat treating a thin Al layer (2.5 nm) on polymer poly(methyl methacrylate co glycidyl methacrylate) in an oven. The memory window and the memory ratio have a prominent dependence on the V_GS sweeping rate, with the largest values of 13.3 V and 2010 which can be obtained at the rate of -0.2 V/S. At a low programming/erasing voltage of ±15 V, the transistors exhibit excellent memory circle characteristics and long data retention property. At last, the possible operation mechanisms of present transistor memories are discussed.