DocumentCode
1441229
Title
A High-Yield 
-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration
Author
Tran, X.A. ; Yu, H.Y. ; Yeo, Y.C. ; Wu, L. ; Liu, W.J. ; Wang, Z.R. ; Fang, Z. ; Pey, K.L. ; Sun, X.W. ; Du, A.Y. ; Nguyen, B.Y. ; Li, M.-F.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume
32
Issue
3
fYear
2011
fDate
3/1/2011 12:00:00 AM
Firstpage
396
Lastpage
398
Abstract
In this letter, a resistive random access memory based on Ni electrode/HfOx, dielectric/n+ Si substrate structure is demonstrated, which can be integrated with Si diode as selector for application in crossbar architecture. The unipolar device shows well-behaved memory performance, such as high ON/OFF resistance ratio (>; 103), good retention characteristics (>; 105 s at 150 °C), satisfactory pulse switching endurance (>; 105 cycles), and a fast programming speed of about 50 ns. More importantly, it also exhibits almost 100% device yield on a 6-in wafer.
Keywords
hafnium compounds; nickel; random-access storage; silicon; HfO; Ni; Si; Si-diode selector; crossbar architecture; programming speed; pulse switching endurance; resistive random access memory; unipolar resistive switching; Dielectrics; Electrodes; Nickel; Resistance; Silicon; Switches; Temperature measurement; $hbox{HfO}_{x}$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2099205
Filename
5706352
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