Title :
Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides
Author :
Schwank, J.R. ; Shaneyfelt, M.R. ; Dodd, P.E. ; Ferlet-Cavrois, V. ; Loemker, R.A. ; Winokur, P.S. ; Fleetwood, D.M. ; Paillet, P. ; Leray, J.L. ; Draper, B.L. ; Witczak, S.C. ; Riewe, L.C.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
Large differences in charge buildup in SOI buried oxides are observed for X-ray and Co-60 irradiations of SIMOX and Unibond transistors. The Co-60 response is typically worse than the X-ray response. These results are consistent with expectations derived from previous work on the relative charge yield versus field in thick oxides. The effects of bias configuration and substrate type on charge buildup and hardness assurance issues are explored via experiments and simulation. The worst-case bias condition is found to be either the off-state or transmission gate configuration. Simulations of the buried oxide electric field in the various bias configurations are used to illustrate the factors that affect charge transport and trapping in the buried oxides. Hardness assurance implications are discussed
Keywords :
CMOS integrated circuits; SIMOX; X-ray effects; gamma-ray effects; integrated circuit reliability; integrated circuit testing; radiation hardening (electronics); silicon-on-insulator; Co-60 irradiations; SIMOX; SOI; Unibond transistors; X-ray radiation-induced charge buildup; bias configuration; bias configurations; charge transport; hardness assurance issues; off-state gate configuration; relative charge yield; silicon-on-insulator buried oxides; substrate type; transmission gate configuration; worst-case bias condition; Charge carrier processes; Circuit simulation; Helium; Laboratories; Microelectronics; P-n junctions; Radiation hardening; Silicon on insulator technology; Single event upset; Spontaneous emission;
Journal_Title :
Nuclear Science, IEEE Transactions on
