Title :
Laser probing of bipolar amplification in 0.25-μm MOS/SOI transistors
Author :
Musseau, O. ; Ferlet-Cavrois, V. ; Pelloie, J.L. ; Buchner, S. ; McMorrow, D. ; Campbell, A.B.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
fDate :
12/1/2000 12:00:00 AM
Abstract :
The parasitic bipolar amplification in MOS/SOI transistors determines the SEU sensitivity of actual devices. This response is experimentally measured in a set of single transistors using a focused picosecond laser with submicrometer spatial resolution. This technique, validated by comparing the SEU behavior of registers irradiated with both laser and heavy ions, is relevant for both device physics and hardness assurance applications
Keywords :
MOSFET; amplification; ion beam effects; laser beam effects; radiation hardening (electronics); silicon-on-insulator; 0.25 micron; MOS/SOI transistor; SEU sensitivity; heavy ion irradiation; laser irradiation; parasitic bipolar amplification; radiation hardness; register; CMOS technology; Dielectrics; Doping; FETs; Isolation technology; Laboratories; Laser theory; MOS devices; MOSFETs; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
