Title :
Metal-Induced Continuous Zonal Domain (CZD) Polycrystalline Silicon Thin-Film Transistors and Its Application on Field Sequential Color Liquid Crystal Display
Author :
Zhao, Shuyun ; Meng, Zhiguo ; Wong, Man ; Kwok, Hoi-Sing
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
fDate :
4/1/2010 12:00:00 AM
Abstract :
Metal induced polycrystalline silicon (poly-Si) films composing of continuous zonal domain (CZD) have been obtained through pre-defined crystalline nucleation lines (CNL). The crystallization process is precisely controllable and repeatable. P-channel thin-film transistors (TFTs) built on CZD poly-Si present high performance and high uniformity. Based on this CZD poly-Si TFT technology, which provides fast addressing characteristics and a large aperture ratio, together with a fast liquid crystal mode, a field sequential color liquid crystal display (FSC-LCD) prototype is designed and fabricated successfully. Excellent color purity and fast moving image can be obtained.
Keywords :
colour displays; liquid crystal displays; semiconductor device models; thin film transistors; color purity; crystalline nucleation lines; field sequential color liquid crystal display; metal-induced continuous zonal domain; polycrystalline silicon; thin-film transistors; Apertures; Computer displays; Crystallization; Flat panel displays; Liquid crystal displays; Optical films; Optical filters; Power capacitors; Silicon; Thin film transistors; Active matrix LCD; field sequential color (FSC); metal-induced crystallization; polycrystalline silicon (poly-Si) thin-film transistor (poly-Si TFT);
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2009.2038729
