DocumentCode
1441335
Title
Prediction of the one-year thermal annealing of irradiated commercial devices based on experimental isochronal curves
Author
Saigné, F. ; Dusseau, L. ; Fesquet, J. ; Gasiot, J. ; Ecoffet, R. ; Schrimpf, R.D. ; Galloway, K.F.
Author_Institution
Reims Univ., France
Volume
47
Issue
6
fYear
2000
fDate
12/1/2000 12:00:00 AM
Firstpage
2244
Lastpage
2248
Abstract
In a previous paper, a method was proposed to predict the thermal annealing of irradiated devices from a single experimental isochronal curve. In this paper, the method is applied to four different power MOSFETs. It is shown that for one of the devices the method can not be applied, whereas for the other three devices, the one-year isothermal behavior is predicted with good accuracy. The predicted and experimental isothermal curves are compared for temperatures of 60°C and 90°C. The range of validity of this method is discussed
Keywords
annealing; gamma-ray effects; power MOSFET; 60 C; 90 C; gamma-ray irradiation; isochronal annealing; power MOSFET; thermal annealing; Accuracy; Annealing; Degradation; Isothermal processes; MOSFETs; Prediction methods; Temperature dependence; Temperature distribution; Temperature measurement; Time measurement;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.903760
Filename
903760
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