DocumentCode
1441365
Title
Defects and nanocrystals generated by Si implantation into a-SiO 2
Author
Nicklaw, C.J. ; Pagey, M.P. ; Pantelides, S.T. ; Fleetwood, D.M. ; Schrimpf, R.D. ; Galloway, K.F. ; Wittig, J.E. ; Howard, B.M. ; Taw, E. ; McNeil, W.H. ; Conley, J.F.
Author_Institution
Vanderbilt Univ., Nashville, TN, USA
Volume
47
Issue
6
fYear
2000
fDate
12/1/2000 12:00:00 AM
Firstpage
2269
Lastpage
2275
Abstract
Electrical charge-trapping characteristics have been studied in thermal oxides that were implanted with Si, experimentally using electron spin resonance (ESR), capacitance versus voltage (CV) measurements, transmission electron microscopy (TEM), atomic force microscopy (AFM), and theoretically with Density Functional Theory (DFT) using plane waves. Our study examines possible defect structures associated with excess Si in thermal oxides
Keywords
atomic force microscopy; capacitance; density functional theory; ion implantation; nanostructured materials; paramagnetic resonance; silicon compounds; transmission electron microscopy; Si ion implantation; SiO2; amorphous SiO2; atomic force microscopy; capacitance-voltage characteristics; defect structure; density functional theory; electrical charge trapping; electron spin resonance; nanocrystal; thermal oxide; transmission electron microscopy; Atomic force microscopy; Atomic measurements; Capacitance; Density measurement; Force measurement; Nanocrystals; Paramagnetic resonance; Thermal force; Transmission electron microscopy; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.903764
Filename
903764
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