Title :
Defects and nanocrystals generated by Si implantation into a-SiO 2
Author :
Nicklaw, C.J. ; Pagey, M.P. ; Pantelides, S.T. ; Fleetwood, D.M. ; Schrimpf, R.D. ; Galloway, K.F. ; Wittig, J.E. ; Howard, B.M. ; Taw, E. ; McNeil, W.H. ; Conley, J.F.
Author_Institution :
Vanderbilt Univ., Nashville, TN, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
Electrical charge-trapping characteristics have been studied in thermal oxides that were implanted with Si, experimentally using electron spin resonance (ESR), capacitance versus voltage (CV) measurements, transmission electron microscopy (TEM), atomic force microscopy (AFM), and theoretically with Density Functional Theory (DFT) using plane waves. Our study examines possible defect structures associated with excess Si in thermal oxides
Keywords :
atomic force microscopy; capacitance; density functional theory; ion implantation; nanostructured materials; paramagnetic resonance; silicon compounds; transmission electron microscopy; Si ion implantation; SiO2; amorphous SiO2; atomic force microscopy; capacitance-voltage characteristics; defect structure; density functional theory; electrical charge trapping; electron spin resonance; nanocrystal; thermal oxide; transmission electron microscopy; Atomic force microscopy; Atomic measurements; Capacitance; Density measurement; Force measurement; Nanocrystals; Paramagnetic resonance; Thermal force; Transmission electron microscopy; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
