• DocumentCode
    1441431
  • Title

    A 60 GHz 5 Gb/s Gain-Boosting OOK Demodulator in 0.13 \\mu{\\rm m} CMOS

  • Author

    Byeon, Chul Woo ; Lee, Jae Jin ; Eun, Ki Chan ; Park, Chul Soon

  • Author_Institution
    Dept. of Electr. Eng., KAIST, Daejeon, South Korea
  • Volume
    21
  • Issue
    2
  • fYear
    2011
  • Firstpage
    101
  • Lastpage
    103
  • Abstract
    This letter presents a 60 GHz on-off keying demodulator in a 0.13 μm CMOS. The demodulator consists of a detector and a baseband amplifier and employs a gain-boosting technique for higher conversion gain. The measured conversion gain is 13.6 dB at -16 dBm of input power. The detector voltage re sponsivity is 2434 mV/mW, which is the highest value in a 60 GHz silicon-based demodulator. The demodulator consumes 14.7 mW, and the measured maximum data rate is 5 Gb/s. the energy per bit, which indicates energy efficiency, exhibits 2.94 pJ/b. To the best of our knowledge, this demodulator achieves the highest data rate and the lowest energy per bit of all published 60 GHz band OOK de modulators using silicon-based technology.
  • Keywords
    CMOS integrated circuits; amplifiers; amplitude shift keying; demodulators; elemental semiconductors; silicon; CMOS technology; Si; baseband amplifier; detector; frequency 60 GHz; gain-boosting OOK demodulator; noise figure 13.6 dB; on-off keying demodulator; power 14.7 mW; silicon-based demodulator; silicon-based technology; size 0.13 mum; Baseband; CMOS integrated circuits; Demodulation; Detectors; Gain; Resistance; Voltage measurement; 60 GHz; Demodulator; gain-boosting; on-off keying (OOK);
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2010.2096411
  • Filename
    5706381