Title :
The impact of single event gate rupture in linear devices
Author :
Lum, Gary K. ; O´Donnell, Hugh ; Boruta, Nicholas
Author_Institution :
Lockheed Martin Space Syst. Co., Sunnyvale, CA, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
A number of analog devices has exhibited permanent single event failure when exposed to heavy ions of LETs 26.6 MeV cm2/mg or higher. Single event gate rupture (SEGR) was uncovered to be the failure mode in several analog circuits using failure analysis tools and circuit modeling. A new approach to assessing the risk of SEGR for a system design will be presented which strongly depends on angles near normal incident and on the critical electric field where SEGR occurs
Keywords :
analogue integrated circuits; failure analysis; ion beam effects; analog circuit; circuit model; critical electric field; failure analysis; heavy ion irradiation; linear device; single event gate rupture; Analog circuits; Circuit testing; Dielectric devices; Failure analysis; Field programmable gate arrays; Gold; MOSFETs; Single event upset; System analysis and design; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
