DocumentCode
1441490
Title
Angular dependence of DRAM upset susceptibility and implications for testing and analysis
Author
Guertin, Steven M. ; Edmonds, Larry D. ; Swift, Gary M.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
47
Issue
6
fYear
2000
fDate
12/1/2000 12:00:00 AM
Firstpage
2380
Lastpage
2385
Abstract
Heavy ion irradiations of two types of commercial DRAM´s reveal unexpected angular responses. One device´s cross section varied by two orders of magnitude with azimuthal angle. Accurate prediction of space rates requires accommodating this effect
Keywords
DRAM chips; integrated circuit testing; ion beam effects; space vehicle electronics; DRAM; angular dependence; cross-section; heavy ion irradiation; space vehicle electronics; testing; upset susceptibility; Azimuth; Azimuthal angle; Helium; Life estimation; Particle beams; Propulsion; Random access memory; Space missions; Space technology; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.903780
Filename
903780
Link To Document