Title :
In-flight observations of multiple-bit upset in DRAMs
Author :
Swift, Gary M. ; Guertin, Steven M.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
In interplanetary space, the Cassini solid-state recorder is experiencing the predicted number of upsets, but a very high rate of uncorrectable errors. An experimental investigation of the flight DRAMs susceptibility to multiple-bit upset (MBU) proved enlightening, revealing an unexpectedly high rate of MBUs (even caused by protons). In combination with an architectural flaw in the error correction circuitry, these explain the flight anomaly
Keywords :
DRAM chips; error correction; ion beam effects; proton effects; space vehicle electronics; Cassini spacecraft; DRAM; error correction circuit; heavy ion irradiation; in-flight testing; multiple-bit upset; proton irradiation; solid-state recorder; Error analysis; Error correction; Manufacturing; Packaging; Propulsion; Protons; Random access memory; Single event transient; Solid state circuits; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
