DocumentCode
1441504
Title
Application of laser testing in study of SEE mechanisms in 16-Mbit DRAMs
Author
Duzellier, Sophie ; Falguére, Didier ; Guibert, Laurent ; Pouget, Vincent ; Fouillat, Pascal ; Ecoffet, Robert
Author_Institution
ONERA-DESP, Toulouse, France
Volume
47
Issue
6
fYear
2000
fDate
12/1/2000 12:00:00 AM
Firstpage
2392
Lastpage
2399
Abstract
A laser experiment has been carried out on the SMJ416400 and LUNA-E 16Mbit DRAMs in order to identify the mechanism leading to severe row/column errors. The error signatures observed with heavy ions are reproduced, related to physical locations on the die and the conditions of occurrence are studied (temporal behavior...). The question of laser to ion equivalence is discussed
Keywords
DRAM chips; ion beam effects; laser beam effects; 16 Mbit; DRAM; LUNA-E; SMJ416400; error signature; heavy ion irradiation; laser testing; single event effect; Laser applications; Laser modes; Laser theory; Optical sensors; Particle beam optics; Protons; Random access memory; Shadow mapping; Solid state circuits; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.903782
Filename
903782
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