• DocumentCode
    1441510
  • Title

    Analysis of single-ion multiple-bit upset in high-density DRAMs

  • Author

    Makihara, A. ; Shindou, H. ; Nemoto, N. ; Kuboyama, S. ; Matsuda, S. ; Oshima, T. ; Hirao, T. ; Itoh, H. ; Buchner, S. ; Campbell, A.B.

  • Author_Institution
    Nat. Space Dev. Agency of Japan, Ibaraki, Japan
  • Volume
    47
  • Issue
    6
  • fYear
    2000
  • fDate
    12/1/2000 12:00:00 AM
  • Firstpage
    2400
  • Lastpage
    2404
  • Abstract
    New types of multiple-bit upset (MBU) modes have been identified in high density DRAMs (16 Mbit and 64 Mbit). The identification of the mechanisms responsible for the new modes is based on detailed physical bit-map analysis
  • Keywords
    DRAM chips; ion beam effects; 16 Mbit; 64 Mbit; bit-map analysis; high-density DRAM; single-ion multiple-bit upset; Capacitance; Error correction; Error correction codes; Manufacturing; Protons; Random access memory; Single event transient; Single event upset; Solid state circuits; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.903783
  • Filename
    903783
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1441510