Title :
Analysis of single-ion multiple-bit upset in high-density DRAMs
Author :
Makihara, A. ; Shindou, H. ; Nemoto, N. ; Kuboyama, S. ; Matsuda, S. ; Oshima, T. ; Hirao, T. ; Itoh, H. ; Buchner, S. ; Campbell, A.B.
Author_Institution :
Nat. Space Dev. Agency of Japan, Ibaraki, Japan
fDate :
12/1/2000 12:00:00 AM
Abstract :
New types of multiple-bit upset (MBU) modes have been identified in high density DRAMs (16 Mbit and 64 Mbit). The identification of the mechanisms responsible for the new modes is based on detailed physical bit-map analysis
Keywords :
DRAM chips; ion beam effects; 16 Mbit; 64 Mbit; bit-map analysis; high-density DRAM; single-ion multiple-bit upset; Capacitance; Error correction; Error correction codes; Manufacturing; Protons; Random access memory; Single event transient; Single event upset; Solid state circuits; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
