Measurement of the effective sensitive volume of FAMOS cells of an ultraviolet erasable programmable read-only memory

Author

Scheick, Leif Z. ; McNulty, Peter J. ; Roth, David R.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

47

Issue

6

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

2428

Lastpage

2434

Abstract

A method is described for measuring the sensitive volume of the oxide which makes up the collection region for erasure surrounding the floating gate of the FAMOS cell of a UVPROM using the data acquired from the output of the pins of the device. A direct measurement of the dose required to erase the Floating gate Avalanche injected metal oxide silicon (FAMOS) cell yields a measurement of the volume of oxide which collects the charge. Another method using target theory to determine the sensitive volume of the device is also presented with good agreement between the methods. The sensitive volume depends on the LET of the radiation. The ramifications for microdosimetry and cell failure are discussed as well as for the long term use aspects of nonvolatile memories

Keywords

PROM; integrated circuit measurement; integrated memory circuits; radiation effects; FAMOS cells; LET; UVPROM; cell failure; collection region; direct dose measurement; effective sensitive volume measurement; floating gate avalanche injected MOS cell; long term use; microdosimetry; nonvolatile memories; oxide volume; programmable read-only memory; target theory; ultraviolet erasable PROM; Charge measurement; Circuits; Current measurement; EPROM; Electrons; Laboratories; Nonvolatile memory; Propulsion; Radiation effects; Volume measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.903788

Filename

903788