Title :
Displacement damage effects in InGaAs detectors: experimental results and semi-empirical model prediction
Author :
Barde, S. ; Ecoffet, R. ; Costeraste, J. ; Meygret, A. ; Hugon, X.
Author_Institution :
CNES, Toulouse, France
fDate :
12/1/2000 12:00:00 AM
Abstract :
Proton irradiation results are presented for InGaAs multiplexed detector arrays used on the SPOT 4 satellite. Mean and extreme dark current values and random telegraph signal are analyzed and extreme dark current values are fitted with semiempirical models. Prediction of orbital behavior is in good agreement with flight data
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; infrared detectors; multiplexing; photodiodes; proton effects; remote sensing; semiconductor device models; III-V semiconductors; InGaAs; MIR detectors; SPOT 4 satellite; dark current values; displacement damage effects; flight data; multiplexed detector arrays; orbital behavior; photodiodes; proton irradiation results; random telegraph signal; semi-empirical model prediction; Dark current; Diodes; Electrons; Indium gallium arsenide; Infrared detectors; Photodiodes; Predictive models; Protons; Satellites; Telegraphy;
Journal_Title :
Nuclear Science, IEEE Transactions on
