Title :
Monte Carlo Simulation of InAlAs/InAlGaAs Tandem Avalanche Photodiodes
Author :
Sun, Wenlu ; Zheng, Xiaoguang ; Lu, Zhiwen ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
fDate :
4/1/2012 12:00:00 AM
Abstract :
Monte Carlo simulation is performed on a low-noise, three-stage tandem avalanche photodiode with InAlAs/InAlGaAs impact-ionization-engineered multiplication region. The simulated excess noise factor agrees well with experimental measurements. A modified structure to further reduce the excess noise is proposed.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; InAlAs-InAlGaAs; Monte Carlo simulation; impact-ionization-engineered multiplication region; low-noise; noise factor; tandem avalanche photodiodes; three-stage tandem avalanche photodiode; Avalanche photodiodes; Electric fields; Heterojunctions; Impact ionization; Indium compounds; Noise; Avalanche photodiode; Monte Carlo simulation; impactionization;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2012.2187046
