Title :
Radiation-induced dark current in CMOS active pixel sensors
Author :
Cohen, Muriel ; David, Jean-Pierre
Author_Institution :
ONERA-CERT, Toulouse, France
fDate :
12/1/2000 12:00:00 AM
Abstract :
Degradation behavior of CMOS active pixel sensors exposed to protons and cobalt 60 is presented. The most sensitive parameter is the dark current: the mean value of the degradation is always dominated by ionizing effects
Keywords :
CMOS image sensors; dark conductivity; gamma-ray effects; proton effects; radiation hardening (electronics); space vehicle electronics; CMOS active pixel sensors; gamma-ray effects; hardness assurance; ionizing effects; photogate pixels; proton effects; radiation induced degradation; radiation-induced dark current; space applications; CMOS process; Circuits; Dark current; Detectors; Ionizing radiation sensors; Noise reduction; Photodiodes; Protons; Sensor phenomena and characterization; Thermal degradation;
Journal_Title :
Nuclear Science, IEEE Transactions on
