Title :
Characterization of proton damage in light-emitting diodes
Author :
Johnston, A.H. ; Miyahira, T.F.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
Proton damage is investigated for several types of modern light-emitting diodes (LEDs), examining the damage from the standpoint of older models based on lifetime degradation as well as the simpler method of normalized degradation. An empirical model is developed to describe injection-enhanced annealing in amphoterically doped LEDs. Experimental results on “aged” devices show that wearout degradation does not decrease the sensitivity of devices to radiation damage
Keywords :
annealing; carrier lifetime; light emitting diodes; proton effects; radiation hardening (electronics); semiconductor device models; space vehicle electronics; I-V characteristics; aged devices; amphoterically doped LED; diffusion-limited damage; displacement damage; empirical model; energy dependence; injection-enhanced annealing; lifetime degradation; light-emitting diodes; normalized degradation; proton damage; radiation damage sensitivity; space qualified devices; wearout degradation; Annealing; Current measurement; Degradation; Electronics packaging; Light emitting diodes; NASA; Propulsion; Protons; Silicon; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
