Title :
High Structural Quality of Type II InAs/GaSb Superlattices for Very Long Wavelength Infrared Detection by Interface Control
Author :
Wei, Yang ; Ma, Wenquan ; Zhang, Yanhua ; Huang, Jianliang ; Cao, Yulian ; Cui, Kai
Author_Institution :
Lab. of Nano-Optoelectron., Inst. of Semicond., Beijing, China
fDate :
4/1/2012 12:00:00 AM
Abstract :
We investigate the interface control for very long wavelength infrared InAs/GaSb superlattice (SL) structures. An InAs/GaSb SL photodetector with very high structural quality has been demonstrated by precisely controlling the Sb-soak, the growth stop time and the InSb layer thickness at the interfaces. The full width at half maximum of the X-ray diffraction satellite peaks of a p-i-n device structure is only 21 arcsec. The 50% cutoff wavelength of the detector is 14.5 μm at 77 K. At 14.5 μm, the quantum efficiency is 14%, while at the photoresponse maximum position of 7.7 μm it is 50%.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; infrared detectors; optical control; photodetectors; superlattices; InAs-GaSb; X-ray diffraction satellite peaks; interface control; p-i-n device structure; photodetector; superlattices; temperature 77 K; very long wavelength infrared detection; wavelength 14.5 mum; wavelength 7.7 mum; Dark current; Detectors; Molecular beam epitaxial growth; Photodetectors; Satellites; Superlattices; X-ray scattering; InAs/GaSb superlattice; interface; very long wavelength;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2012.2186955
