Title :
Total dose radiation response and high temperature imprint characteristics of chalcogenide based RAM resistor elements
Author :
Bernacki, Steve ; Hunt, Ken ; Tyson, Scott ; Hudgens, Steve ; Pashmakov, Boil ; Czubatyj, Wally
Author_Institution :
Raytheon Co., Sudbury, MA, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
Chalcogenide thin film resistor elements are being integrated with CMOS structures for nonvolatile memory applications. This paper reports on the first total dose and imprint data published on this new technology demonstrating no observable effects on chalcogenide films after exposure to 1 Mrad(Si) and 125°C temperature
Keywords :
CMOS memory circuits; chalcogenide glasses; high-temperature electronics; low-power electronics; radiation effects; random-access storage; space vehicle electronics; 1 Mrad; 125 degC; CMOS structures; chalcogenide thin film resistor elements; high temperature imprint characteristics; nonvolatile memory applications; total dose radiation response; Conducting materials; Conductivity; Crystalline materials; Crystallization; Laboratories; Resistors; Semiconductor materials; Space technology; Switches; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
