DocumentCode
1441666
Title
Analysis of radiation effects on individual DRAM cells
Author
Scheick, Leif Z. ; Guertin, Steven M. ; Swift, Gary M.
Volume
47
Issue
6
fYear
2000
fDate
12/1/2000 12:00:00 AM
Firstpage
2534
Lastpage
2538
Abstract
A novel way to measure the radiation characteristics of DRAM memory cells is presented. Radiation exposure tends to drive retention times lower for cells. The change in retention time (the time period required for a cell to upset without refreshing) is used to measure the effect of irradiation on the DRAM cells. Both the radiation response of a single DRAM cell and the response of all cells as a statistical whole are analyzed
Keywords
DRAM chips; cellular arrays; integrated circuit reliability; radiation effects; DRAM cells; cell upset; radiation effects; radiation response; retention times; statistical whole; Aerospace electronics; Capacitors; Error correction; Ionizing radiation; Radiation effects; Random access memory; Single event upset; Testing; Time measurement; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.903804
Filename
903804
Link To Document