Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs

Author

Shaneyfelt, M.R. ; Schwank, J.R. ; Witczak, S.C. ; Fleetwood, D.M. ; Pease, R.L. ; Winokur, P.S. ; Riewe, L.C. ; Hash, G.L.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

47

Issue

6

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

2539

Lastpage

2545

Abstract

A pre-irradiation elevated-temperature stress is shown to have a significant impact on the radiation response of a linear bipolar circuit. Thermal cycling can lead to part-to-part variability in the radiation response of circuits packaged from the same wafer. In addition, it is demonstrated that a pre-irradiation elevated-temperature stress can significantly impact the enhanced low dose rate sensitivity (ELDRS) of the LM111 voltage comparator. Thermal stress moderates and, in some cases, eliminates ELDRS. The data are consistent with space charge models. These results suggest that there may be a connection between the mechanisms responsible for thermal-stress effects and ELDRS in linear circuits. Implications of these results for hardness assurance testing and mechanisms are discussed

Keywords

bipolar analogue integrated circuits; comparators (circuits); integrated circuit modelling; integrated circuit reliability; integrated circuit testing; radiation effects; radiation hardening (electronics); thermal stresses; LM111 voltage comparator; enhanced low dose rate sensitivity; hardness assurance testing; linear bipolar ICs; part-to-part variability; pre-irradiation elevated-temperature stress; radiation response; space charge models; thermal cycling; thermal-stress effects; Annealing; CMOS technology; Circuits; Laboratories; Packaging; Positron emission tomography; Space charge; Thermal stresses; US Department of Energy; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.903805

Filename

903805