Title :
Circuit technique for threshold voltage stabilization using substrate bias in total dose environments
Author :
Shreedhara, Jayanth K. ; Barnaby, Hugh J. ; Bhuva, Bharat L. ; Kerns, David V., Jr. ; Kerns, Sherra E.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
Radiation tolerance of CMOS circuits to total dose can be improved by adjusting the p-substrate voltage to keep the n-channel threshold voltage above a minimum value. This paper presents a circuit design, implemented on an IC and on a breadboard, for dynamically adjusting the substrate voltage. Experimental results clearly show that devices with threshold voltage stabilization exhibit longer lifetime as compared to those without the stabilization circuit
Keywords :
CMOS integrated circuits; circuit stability; integrated circuit reliability; radiation effects; radiation hardening (electronics); CMOS circuits; IC reliability; n-channel threshold voltage; p-substrate voltage; radiation tolerance; substrate bias; threshold voltage stabilization; total dose environments; Capacitance; Circuit noise; Circuit synthesis; Degradation; Helium; MOSFET circuits; Semiconductor device noise; Semiconductor devices; Substrates; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
