Title :
660 nm wavelength GaInAsP/AlGaAs distributed feedback lasers
Author :
Chong, Tony ; Kishino, Katsumi
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo
fDate :
3/31/1988 12:00:00 AM
Abstract :
GaInAsP/AlGaAs distributed feedback (DFB) lasers emitting at 660 nm were fabricated by liquid phase epitaxy for the first time. DFB mode oscillation in a single longitudinal mode was observed in the temperature range from 22°C to -24°C and in the current range up to 1.25 times the threshold (here, the output power was 5 mW). The temperature dependence of lasing wavelength was as small as 0.04 nm/deg
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; -24 to 22 degC; 5 mW; 660 nm; DFB mode oscillation; GaInAsP-AlGaAs; III-V semiconductors; LPE; distributed feedback lasers; lasing wavelength; liquid phase epitaxy; semiconductor lasers; single longitudinal mode; temperature dependence;
Journal_Title :
Electronics Letters
