Title :
Mechanism for single-event burnout of bipolar transistors
Author :
Kuboyama, Satoshi ; Suzuki, Takahiro ; Hirao, Toshio ; Matsuda, Sumio
Author_Institution :
Nat. Space Dev. Agency of Japan, Tokyo, Japan
fDate :
12/1/2000 12:00:00 AM
Abstract :
The mechanism for single-event burnout (SEB) of bipolar junction transistors (BJTs) was investigated with EPICS (Energetic Particle Induced Charge Spectroscopy) technique. The result indicated that the SEBs were triggered by newly identified electron injection mechanism that could not be predicted by usual numerical device simulators. Additionally the two stage SEB mechanism was proposed for BJTs
Keywords :
avalanche breakdown; bipolar transistors; ion beam effects; radiation hardening (electronics); semiconductor device breakdown; space vehicle electronics; HI irradiation; avalanche multiplication role; bipolar junction transistors; electron injection mechanism; energetic particle induced charge spectroscopy; single-event burnout mechanism; two-stage mechanism; Aerospace electronics; Bipolar transistors; Electrons; MOSFETs; Numerical simulation; Performance evaluation; Predictive models; Semiconductor devices; Spectroscopy; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
