Title :
Calculation of heavy ion induced leakage current in n-MOSFETs
Author :
Loquet, Jean-Gabriel ; David, Jean-Pierre ; Briand, Renaud ; Fouillat, Pascal
Author_Institution :
ONERA-CERT, Toulouse, France
fDate :
12/1/2000 12:00:00 AM
Abstract :
This paper presents a new simulation method useful to describe heavy ion induced leakage current semi-permanent failure modes in n-MOSFETs, allowing thus to explain experimental results, and proposes to use it to forecast the sensitivity of future technologies for that specific failure mode
Keywords :
CMOS memory circuits; MOSFET; Poisson equation; SRAM chips; electron-hole recombination; ion beam effects; radiation hardening (electronics); semiconductor device models; space vehicle electronics; HI induced degradation; Poisson equation; SRAM; electron-hole recombination; failure mode sensitivity; heavy ion induced leakage current; initial ion track model; n-MOSFET; radiation hardness; semipermanent failure modes; simulation method; stuck bits; Degradation; Extrapolation; Leakage current; MOSFET circuits; Numerical simulation; Paper technology; Predictive models; Space technology; Technology forecasting; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
