Title :
Charge-collection characteristics of low-power ultrahigh speed, metamorphic AlSb/InAs high-electron mobility transistors (HEMTs)
Author :
McMorrow, Dale ; Boos, J. Brad ; Knudson, Alvin R. ; Buchner, Stephen ; Yang, Ming-Jey ; Bennett, Brian R. ; Melinger, Joseph S.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
Time-resolved charge-collection measurements are performed on AlSb/InAs HEMTs with pulsed laser excitation as a function of device bias conditions and the incident laser pulse energy. The results provide clear evidence for the presence of charge-enhancement processes that, in many ways, are analogous to those observed previously for GaAs FET technology
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; laser beam effects; low-power electronics; semiconductor device measurement; time resolved spectroscopy; AlSb-InAs; III-V semiconductors; charge-collection characteristics; charge-enhancement processes; device bias conditions; high-electron mobility transistors; incident laser pulse energy; low-power ultrahigh speed devices; pulsed laser excitation; time-resolved measurements; Current measurement; Energy measurement; FETs; Gallium arsenide; HEMTs; Laser excitation; MODFETs; Optical pulses; Performance evaluation; Pulse measurements;
Journal_Title :
Nuclear Science, IEEE Transactions on
