Title :
Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates
Author :
Marshall, Paul W. ; Carts, Martin A. ; Campbell, Arthur ; McMorrow, Dale ; Buchner, Steve ; Stewart, Ryan ; Randall, Barbara ; Gilbert, Barry ; Reed, Robert A.
Author_Institution :
SFA Inc., Landover, MD, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
This attempt at circuit level single event effects (SEE) hardening of SiGe HBT logic provides the first reported indication of the level of sensitivity in this important technology, Characterization over data rate up to 3 Gbps and over a broad range of heavy ion LETs provides important clues to upset mechanisms and implications for upset rate predictions. We augment ion test data with pulsed laser SEE testing to indicate the sensitive targets within the circuit and to provide insights into the upset mechanism(s),
Keywords :
Ge-Si alloys; bipolar logic circuits; heterojunction bipolar transistors; integrated circuit reliability; integrated circuit testing; ion beam effects; laser beam effects; radiation hardening (electronics); semiconductor materials; 0 to 3 Gbit/s; SiGe; circuit-hardened HBT logic; gigabit per second data rates; heavy ion LETs; ion test data; pulsed laser SEE testing; single event effects; upset mechanisms; upset rate predictions; Circuit testing; Clocks; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Logic circuits; Logic devices; Silicon germanium; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
