Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates

Author

Marshall, Paul W. ; Carts, Martin A. ; Campbell, Arthur ; McMorrow, Dale ; Buchner, Steve ; Stewart, Ryan ; Randall, Barbara ; Gilbert, Barry ; Reed, Robert A.

Author_Institution

SFA Inc., Landover, MD, USA

Volume

47

Issue

6

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

2669

Lastpage

2674

Abstract

This attempt at circuit level single event effects (SEE) hardening of SiGe HBT logic provides the first reported indication of the level of sensitivity in this important technology, Characterization over data rate up to 3 Gbps and over a broad range of heavy ion LETs provides important clues to upset mechanisms and implications for upset rate predictions. We augment ion test data with pulsed laser SEE testing to indicate the sensitive targets within the circuit and to provide insights into the upset mechanism(s),

Keywords

Ge-Si alloys; bipolar logic circuits; heterojunction bipolar transistors; integrated circuit reliability; integrated circuit testing; ion beam effects; laser beam effects; radiation hardening (electronics); semiconductor materials; 0 to 3 Gbit/s; SiGe; circuit-hardened HBT logic; gigabit per second data rates; heavy ion LETs; ion test data; pulsed laser SEE testing; single event effects; upset mechanisms; upset rate predictions; Circuit testing; Clocks; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Logic circuits; Logic devices; Silicon germanium; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.903824

Filename

903824