Title :
Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs
Author :
Niu, Guofu ; Cressler, John D. ; Shoga, Munir ; Jobe, Kay ; Chu, Peter ; Harame, David L.
Author_Institution :
Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
This paper presents quasi-3-D simulation results of SEE-induced charge collection in UHV/CVD SiGe HBTs. Depending on the bias and load condition, a significant fraction of electrons can be collected by the emitter rather than the collector. Most of the generated holes are collected by the substrate for deep ion strikes, and by the base for shallow ion strikes. A higher substrate doping can worsen the upset of the circuit function, despite the reduced total amount of charge collected. A lower substrate doping and a lower collector-substrate junction reverse bias are desired to improve SEU hardness
Keywords :
Ge-Si alloys; digital simulation; heterojunction bipolar transistors; ion beam effects; radiation hardening (electronics); semiconductor device models; semiconductor materials; HBTs; SEE-induced charge collection; SEU hardness; SiGe; bias condition; circuit function; collector-substrate junction reverse bias; deep ion strikes; load condition; quasi-3D simulation results; shallow ion strikes; substrate doping; Circuit simulation; Computational modeling; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Medical simulation; Microelectronics; Microwave technology; Silicon germanium; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
