CdTe detectors´ response to irradiation with high-energy gamma-rays

Author

Chirco, P. ; Caroli, E. ; Cavailini, A. ; Dusi, W. ; Fraboni, B. ; Hage-Ali, M. ; Morigi, M.P. ; Siffer, P. ; Zanarini, M.

Author_Institution

Dipartimento di Fisica, Bologna Univ., Italy

Volume

47

Issue

6

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

2078

Lastpage

2083

Abstract

In recent years the performance of room-temperature semiconductor detectors such as CdTe has improved and they are now suitable candidates for several applications. However, some key parameters that can severely affect such performances have not been measured in detail yet. We have extended previous studies on the radiation damage of a set of CdTe detectors irradiated in a ⁶⁰Co gamma-cell in a wide range of doses. A full characterization of the performance of irradiated detectors has been obtained by means of spectroscopic, electrostatic, photo-induced current transient spectroscopy and photo-deep level transient spectroscopy measurements to quote the energy resolution, the leakage current, the activation energy and capture cross-section of deep level defects, respectively

Keywords

II-VI semiconductors; cadmium compounds; deep levels; defect states; gamma-ray effects; semiconductor counters; ⁶⁰Co gamma-cell; CdTe; CdTe detector; activation energy; capture cross-section; deep level defects; energy resolution; high-energy gamma-rays; leakage current; photo-deep level transient spectroscopy measurements; photo-induced current transient spectroscopy; radiation damage; room-temperature semiconductor detectors; Current measurement; Electrostatics; Gamma ray detection; Gamma ray detectors; Gas detectors; Leak detection; Performance evaluation; Radiation detectors; Semiconductor radiation detectors; Spectroscopy;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.903851

Filename

903851