DocumentCode
1442410
Title
Nitride-Based LEDs With High-Reflectance and Wide-Angle Ag Mirror 
SiO 
/TiO
Author
Lin, Nan-Ming ; Shei, Shih-Chang ; Chang, Shoou-Jinn
Author_Institution
Inst. of Nanotechnol. & Microsyst. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
29
Issue
7
fYear
2011
fDate
4/1/2011 12:00:00 AM
Firstpage
1033
Lastpage
1038
Abstract
Nitride-based light-emitting diodes (LEDs) with a backside reflector combining a SiO2/TiO2 distributed Bragg reflector (DBR) and an Ag mirror were simulated and fabricated. With combining the three-pair SiO2/TiO2 DBR and an Ag mirror, it was found that we can significantly enhance the 96% reflectance of Ag mirror to 99.1% with an incident angle of 0°. Furthermore, reflectance of the proposed reflector depends slightly on incident light wavelength and the incident angle. With 350-mA current injection, it was found that the output powers were 122, 138, 153, 156, and 162 mW for the LEDs without reflector, with an Al mirror, with Al +3DBR mirror, with an Ag mirror, and with Ag+3DBR mirror, respectively.
Keywords
III-V semiconductors; charge injection; distributed Bragg reflectors; gallium compounds; indium compounds; light emitting diodes; mirrors; optical fabrication; silicon compounds; titanium compounds; Ag; DBR backside reflector; InGaN-GaN; SiO2-TiO2; current 350 mA; current injection; distributed Bragg reflector; high-reflectance mirror; nitride-based LED; optical fabrication; power 122 mW to 162 mW; wide-angle mirror; Distributed Bragg reflectors; Gallium nitride; Light emitting diodes; Reflection; Reflectivity; Substrates; Ag; GaN; distributed Bragg reflector (DBR); light-emitting diode (LED); reflector;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.2011.2111416
Filename
5708156
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