DocumentCode :
1442432
Title :
Realization of Three-Dimensional Si and 
Nanowall Structures Using Reactive Ion Etching
Author :
Azimi, S. ; Sandoughsaz, A. ; Mohajerzadeh, S.
Author_Institution :
Thin Film & Nanoelectronic Lab., Univ. of Tehran, Tehran, Iran
Volume :
20
Issue :
2
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
353
Lastpage :
354
Abstract :
We report the realization of highly sculptured 3-D silicon and SiO2 nanowall structures on silicon substrates with a single masking layer using a hydrogen-assisted deep reactive ion etching process. By precisely controlling the passivation and etching steps, it is possible to achieve the desired 3-D featured silicon structures, which are bases for SiO2 3-D nanowalls.
Keywords :
elemental semiconductors; nanofabrication; nanostructured materials; passivation; plasma materials processing; semiconductor growth; silicon; silicon compounds; sputter etching; Si; SiO2; highly sculptured nanowall structures; hydrogen-assisted deep reactive ion etching; passivation; silicon substrates; single masking layer; three-dimensional nanowall structures; Etching; Fabrication; Nanostructures; Passivation; Periodic structures; Silicon; Substrates; Micromachining; nanotechnology; optical device fabrication; plasma etching;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2011.2105248
Filename :
5708160
Link To Document :
