• DocumentCode
    1442432
  • Title

    Realization of Three-Dimensional Si and \\hbox {SiO}_{2} Nanowall Structures Using Reactive Ion Etching

  • Author

    Azimi, S. ; Sandoughsaz, A. ; Mohajerzadeh, S.

  • Author_Institution
    Thin Film & Nanoelectronic Lab., Univ. of Tehran, Tehran, Iran
  • Volume
    20
  • Issue
    2
  • fYear
    2011
  • fDate
    4/1/2011 12:00:00 AM
  • Firstpage
    353
  • Lastpage
    354
  • Abstract
    We report the realization of highly sculptured 3-D silicon and SiO2 nanowall structures on silicon substrates with a single masking layer using a hydrogen-assisted deep reactive ion etching process. By precisely controlling the passivation and etching steps, it is possible to achieve the desired 3-D featured silicon structures, which are bases for SiO2 3-D nanowalls.
  • Keywords
    elemental semiconductors; nanofabrication; nanostructured materials; passivation; plasma materials processing; semiconductor growth; silicon; silicon compounds; sputter etching; Si; SiO2; highly sculptured nanowall structures; hydrogen-assisted deep reactive ion etching; passivation; silicon substrates; single masking layer; three-dimensional nanowall structures; Etching; Fabrication; Nanostructures; Passivation; Periodic structures; Silicon; Substrates; Micromachining; nanotechnology; optical device fabrication; plasma etching;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2011.2105248
  • Filename
    5708160
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1442432