DocumentCode :
1442507
Title :
MOS-gated thyristors (MCTs) for repetitive high power switching
Author :
Bayne, Steven B. ; Portnoy, William M. ; Hefner, Allen R., Jr.
Author_Institution :
Dept. of Electr. Eng., Texas Tech. Univ., Lubbock, TX, USA
Volume :
16
Issue :
1
fYear :
2001
fDate :
1/1/2001 12:00:00 AM
Firstpage :
125
Lastpage :
131
Abstract :
Certain applications for pulse power require narrow, high current pulses for their implementation. This work was performed to determine if MOS controlled thyristors (MCTs) could be used for these applications. The MCTs were tested as discharge switches in a low inductance circuit delivering 1 μs pulses at currents between roughly 3 kA and 11 kA, single shot and repetitively at 1, 10, and 50 Hz. Although up to 9000 switching events could be obtained, all the devices failed at some combination of current and repetition rate. Failure was attributed to temperature increases caused by average power dissipated in the thyristor during the switching sequence. A simulation was performed to confirm that the temperature rise was sufficient to account for failure. Considerable heat sinking, and perhaps a better thermal package, would be required before the MCT could be considered for pulse power applications
Keywords :
MOS-controlled thyristors; power semiconductor switches; pulsed power switches; semiconductor device measurement; semiconductor device reliability; semiconductor device testing; 1 Hz; 1 mus; 10 Hz; 3 to 11 kA; 50 Hz; MOS controlled thyristors; MOS-gated thyristors; heat sink; pulse power switches; repetition rate; repetitive high power switching; semiconductor switch failure; switching events; thermal package; Circuit testing; Cogeneration; Heat sinks; Inductance; Packaging; Pulse circuits; Switches; Switching circuits; Temperature; Thyristors;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/63.903997
Filename :
903997
Link To Document :
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