DocumentCode :
14426
Title :
A Self-Triggered Column-Level ADC for CMOS Pixel Sensors in High Energy Physics
Author :
Liang Zhang ; Morel, Florent ; Hu-Guo, Christine ; Yann Hu
Author_Institution :
Key Lab. of Particle Phys. & Particle Irradiation, Shandong Univ., Jinan, China
Volume :
61
Issue :
3
fYear :
2014
fDate :
Jun-14
Firstpage :
1269
Lastpage :
1277
Abstract :
CMOS pixel sensors (CPS) for the future linear collider vertex detector (VXD) have strict requirements on their analog readout electronics, particularly on the analog-to-digital converter (ADC). This paper presents a low-power and small-area 4-bit column-level ADC for the CMOS pixel sensor, foreseen to equip the outer layers of the VXD. The ADC employs a self-triggered timing and completes the conversion by performing a multi-bit/step approximation. Accounting the fact that in the outer layers, the hit density is in the order of a few per thousand, this ADC is designed to operate in two modes: active mode and inactive mode. The average energy and total capacitance are significantly reduced by a power-gating control and a switching network, respectively. The ADC is fabricated in a 0.35 μm CMOS process with a pixel pitch of 35 μm. It is implemented with 48 columns in a sensor prototype. Each column ADC occupies an area of 35×545 μm2. The measured temporal noise and fixed pattern noise (FPN) are 0.94 and 0.30 mV, respectively. The power consumption, at a 3-V supply and 6.25-MS/s sampling rate, equals to 486 μW in its inactive mode, which is by far the most frequent. This value rises to 714 μW in case of the active mode. These computations indicate an average power consumption of each column in the order of 487 μW, assuming a typical occupancy of ~ 0.5% in the whole sensor. Its DNL and INL are 0.49/-0.28 and 0.29/-0.20 least significant bit, respectively.
Keywords :
CMOS image sensors; analogue-digital conversion; circuit noise; linear colliders; CMOS pixel sensors; FPN; VXD; analog readout electronics; analog-to-digital converters; fixed pattern noise; high energy physics; inactive mode; linear collider vertex detector; multibit approximation; multistep approximation; power 486 muW; power 487 muW; power 714 muW; power gating control; self-triggered column-level ADC; size 0.35 mum; temporal noise; voltage 0.30 mV; voltage 0.94 mV; voltage 3 V; CMOS integrated circuits; Capacitors; Clocks; Latches; Noise; Power demand; Sensors; Analog-to-digital converter (ADC); CMOS pixel sensors (CPS); column-level; linear collider; multi-bit/step approximation; self-triggered; vertex detector (VXD);
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2014.2313560
Filename :
6819091
Link To Document :
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