Title :
1/f Baseband Noise Suppression in OFDM Systems
Author :
Landis, Shay ; Bobrovsky, Ben-Zion
Author_Institution :
Sch. of Electr. Eng., Tel-Aviv Univ., Tel-Aviv, Israel
fDate :
4/1/2011 12:00:00 AM
Abstract :
The commonly used direct-conversion Radio Frequency (RF) chips exhibit an additive 1/f baseband noise around the DC. The 1/f noise level increases as the transistors inside the RF chip become ever smaller. This type of noise mainly affects the low frequencies and can be very significant for small frequency allocations around the DC in Orthogonal Frequency-Division Multiple Access (OFDMA) systems. In this article we present the effects of such 1/f baseband noise on small frequency allocations for a Long Term Evolution (LTE) User Equipment (UE). We proceed to estimate the 1/f baseband noise. Suppression of the 1/f baseband noise is achieved by subtracting the estimated 1/f baseband noise from the received signal. We show that considerable processing gain is achieved when the 1/f baseband noise suppression is applied.
Keywords :
1/f noise; Long Term Evolution; OFDM modulation; frequency allocation; frequency division multiple access; interference suppression; 1/f baseband noise suppression; LTE; Long Term Evolution; OFDM systems; additive 1/f baseband noise; direct-conversion radiofrequency chips; frequency allocations; orthogonal frequency-division multiple access; transistors; user equipment; Baseband; Estimation; Noise; Noise level; OFDM; Radio spectrum management; Resource management; 1/f noise; OFDM; baseband noise; direct conversion;
Journal_Title :
Communications, IEEE Transactions on
DOI :
10.1109/TCOMM.2011.012711.090196